Abstract
Electrical property of Si-doped GaN layers grown on r-plane sapphire substrates by atmospheric metalorganic vapor-phase epitaxy was investigated. The electron mobility was drastically improved when GaN was grown by means of optimized combinations of growth temperature and low-temperature GaN buffer thickness. The highest room-temperature mobility of 220 cm 2/V s was recorded at the carrier density of 1.1 × 10 18 cm - 3 . Temperature dependence of electrical property revealed that the peak mobility of 234 cm 2/V s was obtained at 249 K. From the slope of carrier density as a function of inverse temperature, the activation energy of Si-donors was evaluated to be 11 meV.
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