Abstract
ZnO-TiO2−MgO-Al2O3 linear resistors with various Y2O3 dopant concentrations were fabricated using the conventional solid-state reaction method. The comprehensive investigation of the impact of Y2O3 addition on the microstructure and electrical characteristics of the resistors was carried out. The results indicated that the Y2O3 phase hindered the growth of zinc oxide particles. Additionally, the incorporation of yttrium oxide increased the linearity of the resistors and affected the height of the grain boundary barrier (φb). Subsequently, a Y2O3-doped ZnO linear resistor with a nonlinearity constant (α) of 1.09 and a resistance-temperature constant (αT) of -2.51 × 10−3/ °C was effectively produced. The comprehensive evaluation of the microstructure and relevant electrical characteristics enables the efficient production of linear resistors with excellent electrical properties.
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