Improvement of Electrical Performance by Neutron Irradiation Treatment on IGZO Thin Film Transistors

Sera Kwon,Kwun-Bum Chung,Byung-Hyuk Jun,Jongin Hong

doi:10.3390/coatings10020147

Abstract

The effects of the neutron irradiation treatment on indium-gallium-zinc oxide (IGZO) are investigated as a function of the neutron irradiation time. With an increase in neutron irradiation time, the oxygen vacancies associated the oxygen deficient states increase, and both shallow and deep band edge states below the conduction band also increase. Moreover, the conduction band offset continuously decreases because of the increase in the oxygen vacancies with increasing the neutron irradiation time. In IGZO TFTs with the neutron irradiation time for 10 s, superior device performance demonstrates such as the lower threshold voltage, higher field effect mobility, smaller sub-threshold gate swing, larger on-off current ratio, and improved bias stability, comparing those of other IGZO TFTs.

Highlights

Amorphous oxide semiconductor (AOS) based thin film transistors (TFTs) have attracted attention for generation electronic devices because AOS TFTs exhibit sufficiently high field effect mobility (>10 cm2 /V·s), capability of uniform deposition over large area, as well as fabrication at room temperature without a defect treatment [1,2,3]
Advance of the neutron irradiation treatment, and imposed the neutron irradiation treatment of films and indium-gallium-zinc oxide (IGZO) TFT samples were implemented the thermal annealing at 350 ◦ C for 1 h in advance of 1000 s intreatment, atmospheric at room temperature, whereas
The influence of the neutron irradiation process on the electronic structure of IGZO films and electrical characteristics of IGZO TFTs has been performed as a function of the neutron irradiation time

Summary

Introduction

Amorphous oxide semiconductor (AOS) based thin film transistors (TFTs) have attracted attention for generation electronic devices because AOS TFTs exhibit sufficiently high field effect mobility (>10 cm2 /V·s), capability of uniform deposition over large area, as well as fabrication at room temperature without a defect treatment [1,2,3]. Demonstrated that the hydrogen ion irradiation method improved the electrical characteristics of IGZO based TFTs at room temperature due to the changes of the electronic structures such as the chemical bonding states, band gap, and the band edge states below the conduction band Despite advantages such as low temperature and a short treatment time, the hydrogen ion irradiation method has critical problems in that hydrogen can diffuse in an oxide matrix as substitutional defect and causes device instability [13,14,15], new treatment method to obtain the higher device performance of IGZO based TFTs still has been important issue.

Experiment

Results

Conclusions