Abstract
Improvement of the electrical characteristics of Pt-diffused p+n diodes is achieved by reducing Pt-induced adverse effects. Platinum diffusion induces diffusion of mobile Pt ions into SiO2 films and also changes the surface condition near the Si-SiO2 interface. The former makes the devices unstable and the latter causes increase of leakage current. It is found that mobile Pt ions can be fixed in phosphosilicate glass (PSG) by fabricating metal-phosphosilicate glass-oxide-silicon (MGOS) structures. The reduction of the leakage current is carried out by improving the surface condition near the Si-SiO2 interface. It is revealed that the Pt-diffused p+n diodes having a PSG film on SiO2 film and a (100) substrate instead of a (111) substrate, which is conventionally used in power devices, are useful for both the preservation of electrical stability and the reduction of leakage current.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
