Abstract
In present work, Coronene thin films on Si wafer have been deposited by the spin coating method. It has been ultimately produced Al/Coronene/n-Si/In Schottky diode. Current–voltage (I-V) measurements have been used to determine the effect of illumination intensity in the Schottky diodes. The barrier height (ΦB) values increased as ideality factor (n) values decreased with a increase in illumination intensity. The ΦB values have been found to be 0.697 and 0.755eV at dark and 100mW/cm2, respectively. The n values have been found to be 2.81 and 2.07 at dark and 100mW/cm2, respectively. Additionally, the series resistance (Rs) values from modified Norde method and interface state density (Nss) values using current-voltage measurements have been determined. The values of Rs have been found to be 1924 and 5094Ω at dark and 100mW/cm2, respectively. The values of Nss have been found to be 4.76 × 1012 and 3.15 × 1012eV−1cm−2 at dark and 100mW/cm2, respectively. The diode parameters are improved by applying the variation of illumination intensity to the formed Schottky diodes.
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