Improvement of diode parameters in Al/n-Si Schottky diodes with Coronene interlayer using variation of the illumination intensity

Abstract

In present work, Coronene thin films on Si wafer have been deposited by the spin coating method. It has been ultimately produced Al/Coronene/n-Si/In Schottky diode. Current–voltage (I-V) measurements have been used to determine the effect of illumination intensity in the Schottky diodes. The barrier height (ΦB) values increased as ideality factor (n) values decreased with a increase in illumination intensity. The ΦB values have been found to be 0.697 and 0.755eV at dark and 100mW/cm2, respectively. The n values have been found to be 2.81 and 2.07 at dark and 100mW/cm2, respectively. Additionally, the series resistance (Rs) values from modified Norde method and interface state density (Nss) values using current-voltage measurements have been determined. The values of Rs have been found to be 1924 and 5094Ω at dark and 100mW/cm2, respectively. The values of Nss have been found to be 4.76 × 1012 and 3.15 × 1012eV−1cm−2 at dark and 100mW/cm2, respectively. The diode parameters are improved by applying the variation of illumination intensity to the formed Schottky diodes.