Improvement of cubic silicon carbide crystals grown from solution

Abstract

Abstract Cubic-silicon carbide crystals have been grown from carbon-rich silicon solutions using the travelling-zone method. To improve the growth process, we investigated the effect of controlling more tightly some of the growth parameters. Using such improved growth conditions, our best sample is a 12 mm diameter and ∼3 mm long 3C–SiC crystal. It is grown on a (0001) 2∘ off, 6H–SiC seed and has 〈 111 〉 -orientation. The low amount of silicon inclusions results in a reduced internal stress, which is demonstrated by the consideration of μ -Raman spectra collected at room temperature on a large number of samples.