Abstract
AbstractWe demonstrated InxGa1‐xN epitaxial growth with InN mole fractions of x = 0.10 to 0.23 on an m‐plane ZnO substrate by metal‐organic vapor phase epitaxy. The crystalline quality of the epilayers was found to be much higher than that of epilayers grown on a GaN template on an m‐plane SiC substrate. The strain of the epilayers was investigated by X‐ray reciprocal space mapping. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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