Abstract
The effect of post-growth annealing and atomic H irradiation in molecular beam epitaxy (MBE) of Ga(In)NAs on vacancy-type defects was studied by positron annihilation technique. We observed a reduction of vacancy-type defects after post-growth anneal at 600 °C for 5 min in a flowing N 2 ambient. However, irradiation of atomic H during growth showed no apparent effect on vacancy-type defects. The role of atomic H irradiation in MBE is known to enhance two-dimensional growth mode, which results in overall improvement of material quality. However, we found that supply of excessive amounts of atomic H would result in degradation of GaInNAs films. Under optimized conditions of ∼1% cracking ratio and 0.6 sccm H 2 flow rate, a surface roughness of 0.27 nm or ∼1 monolayer (ML) was successfully obtained.
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