Abstract
The influence of dark and light etching of CdS single crystals on the electrical and optical characteristics of the CdS-Cu",S heterojunction is investigated. It is shown through currentvoltage characteristics, spectral response and junction capacitance measurements that the junction of these cells is strongly affected by the presence of light during the etching process. It is found that when the CuS is formed on an etched CdS surface under light a chalcocite phase (CU2S) is obtained. In contrast, when the CuS layer is grown on a dark etched surface a mixture phase of chalcocite and djurleite (CUI� 96S) is found.
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