Abstract
Moisture absorption and TbCl3 doping of CsPbBr3 thin films were investigated to improve the carrier transport properties. We found that post-deposition moisture-absorbing treatment improved the carrier diffusion length of CsPbBr3 thin films. The moisture-absorbing treatments under a relative humidity of about 20%–40% were effective to improve the carrier diffusion length. TbCl3 doping during the thermal evaporation of CsPbBr3 affected the structure of the deposited films. An excessive amount of TbCl3 doping leads to the formation of CsPb2Br5 additional phase, but a small amount of TbCl3 doping (1%) can improve the carrier diffusion length. The moisture-absorbing treatment and TbCl3 doping are promising techniques to improve the optoelectronic properties of CsPbBr3.
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