Abstract
This article describes a new passivation process of Ga2O3, which consists by sputtering, for a vertical GaN p–n junction diode on a free-standing GaN substrate with a field-plate (FP) structure. We demonstrated reduced plasma damage during the sputtering process by cure annealing, and succeeded in improving the breakdown voltage (VB) to −550 V with the FP, compared with VB of −200 V without the FP. Ga2O3 is a suitable material for the FP because its dielectric constant is similar to that of GaN and it is more easily etched than Al2O3, which is used as a conventional insulator.
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