Improvement of Both n- and p-Channel Mobilities in 4H-SiC MOSFETs by High-Temperature N₂ Annealing

Abstract

Effects of high-temperature (1400 °C–1600 °C) N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> annealing on the interface states of 4H- SiC/SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> and the channel mobility of 4H-SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) were investigated. It is demonstrated that high-temperature N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> annealing is effective not only for the reduction of the interface state density near the conduction band edge but also for that near the valence band edge. N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> annealing improves channel mobility of both n- and p-channel MOSFETs as in the case of nitric oxide (NO) annealing. In particular, the field-effect mobility of the p-channel MOSFETs annealed in an N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ambient was improved to 17 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /Vs, which is 30% higher than that of NO-annealed MOSFETs. The interface state density estimated from the subthreshold slopes in the MOSFETs is much higher than that extracted by the high–low method but is almost comparable to that estimated by the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${C}$ </tex-math></inline-formula> – <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\psi _{\text {s}}$ </tex-math></inline-formula> method in both the cases of interface states near the conduction and the valence band edges. These results suggest that there exist fast states (>1 MHz) near the valence band edge, and these fast states affect the channel mobilities of p-channel SiC MOSFETs as in the case of n-channel MOSFETs.