Improvement of Bipolar Switching Properties of Gd:SiOx RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 Treatment.

Tai-Fa Young,Simon M Sze,Shu-Ping Liang,Yong-En Syu,Tsung-Ming Tsai,Kuan-Chang Chang,Ting-Chang Chang,Kai-Huang Chen

doi:10.1186/s11671-016-1272-5

Abstract

Bipolar switching resistance behaviors of the Gd:SiO2 resistive random access memory (RRAM) devices on indium tin oxide electrode by the low-temperature supercritical CO2-treated technology were investigated. For physical and electrical measurement results obtained, the improvement on oxygen qualities, properties of indium tin oxide electrode, and operation current of the Gd:SiO2 RRAM devices were also observed. In addition, the initial metallic filament-forming model analyses and conduction transferred mechanism in switching resistance properties of the RRAM devices were verified and explained. Finally, the electrical reliability and retention properties of the Gd:SiO2 RRAM devices for low-resistance state (LRS)/high-resistance state (HRS) in different switching cycles were also measured for applications in nonvolatile random memory devices.

Highlights

Many nonvolatile memory devices for ferroelectric random access memory (FeRAM), magnetic random access memory (MRAM), and phrase change memory (PCM) are widely discussed for applications in the smart memory cards, electronic devises, and portable electrical devices [1,2,3,4,5,6,7,8]
Various metals doped into silicon-based oxide thin films are widely and considerably discussed for the resistive random access memory (RRAM) devices because of its great compatibility in integrated circuit (IC) processes, high operation speed, long retention time, and low operation voltage [9,10,11,12,13]
The electrical transferred conduction mechanism of the initial metallic filamentforming model was explained to bipolar switching properties of RRAM devices on ITO electrode in this study

Summary

Introduction

Many nonvolatile memory devices for ferroelectric random access memory (FeRAM), magnetic random access memory (MRAM), and phrase change memory (PCM) are widely discussed for applications in the smart memory cards, electronic devises, and portable electrical devices [1,2,3,4,5,6,7,8] Among these memory devices, various metals doped into silicon-based oxide thin films are widely and considerably discussed for the resistive random access memory (RRAM) devices because of its great compatibility in integrated circuit (IC) processes, high operation speed, long retention time, and low operation voltage [9,10,11,12,13]. The electrical transferred conduction mechanism of the initial metallic filamentforming model was explained to bipolar switching properties of RRAM devices on ITO electrode in this study

Methods

Results

Conclusion