Abstract
We have fabricated GaAs/GaNAs and GaAs/GaNAs/InGaAs multi-quantum wells (MQWs) introduced into the intrinsic region of GaAs p-i-n solar cells by atomic H-assisted RF-molecular beam epitaxy. Compared to the more conventional GaAs/InGaAs-based MQW solar cells, GaAs/GaNAs/InGaAs MQW solar cells can exhibit improved photoresponse in the below-bandgap energy region of GaAs for > 870nm. This is attributed to the extension of band edge into longer wavelengths as achieved by use of GaNAs-based dilute nitride materials.
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