Abstract
TiO 2 -overcoated SnO 2 :F transparent conductive oxide films were prepared by atmospheric pressure chemical vapor deposition (APCVD) and an effect of TiO 2 layer thickness on a-Si solar cell properties was investigated. The optical properties and the structure of the TiO 2 films were evaluated by spectroscopic ellipsometry and X-ray difractometry. a-Si thin film solar cells were fabricated on the SnO 2 :F films over-coated with TiO 2 films of various thicknesses (1.0, 1.5 and 2.0 nm) and I-V characteristics of these cells were measured under 1 sun (100 mW/cm 2 AM-1.5) illumination. It was found that the TiO 2 film deposited by APCVD has a refractive index of 2.4 at 550 nm and anatase crystal structure. The conversion efficiency of the a-Si solar cell fabricated on the 2.0 nm TiO 2 -overcoated SnO 2 :F film increased by 3%, which is mainly attributed to an increase in open circuit voltage (V oc ) of 30 mV.
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