Abstract
In this paper the effect of hydrogen dilution of SiH 4 and CH 4 on the properties of a-SiC:H alloys is reported. Hydrogen dilution is found to improve, at a given optical gap, the photoconductivity of the samples by reducing the concentration of CH 3 groups and, consequently, the total hydrogen content and the density of microvoids, while the concentration of SiC bonds is increased.
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