Abstract
In this study, we tried a new lithography process in order to enhance the writing speed of electron beam (e-beam) direct-write lithography. Diamond like carbon (DLC) and titanium dioxide (TiO/sub 2/) thin films, which have higher secondary electrons (SE) emission coefficient, were deposited between silicon substrate and resist, respectively. In the current work, a negative chemically amplified resist, Shipley SAL601, was used, and was exposed by an electron beam recorder, Obducat, EBR200. The differences of required dose for proper e-beam exposure on each sample (including silicon bare wafer) were appeared by experiments. The results showed that the DLC and TiO/sub 2/ thin films could improve on the writing speed slightly. However, adding these thin films would deteriorate the lithographic resolution. Besides, the results of E-beam exposure on TiO/sub 2/ sample were more sensitive to post exposure baking (PEB) process.
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