Abstract
In this study, we propose a super junction insulated-gate bipolar transistor (SJBT) with separated n-buffer layers to solve a relatively long time for carrier annihilation during turn-off. This proposition improves the turn-off characteristic while maintaining similar on-state characteristics and breakdown voltage. The electrical characteristics of the devices were simulated by using the Synopsys Sentaurus technology computer-aided design (TCAD) simulation tool, and we compared the conventional SJBT with SJBT with separated n-buffer layers. The simulation tool result shows that turn-off loss (Eoff) drops by about 7% when on-state voltage (Von) and breakdown voltage (BV) are similar. Von increases by about 0.5% and BV decreases by only about 0.8%.
Highlights
IntroductionThe power semiconductor is a switching device characterized by high voltage and high current
It is generally composed of a bipolar junction transistor (BJT), insulatedgate bipolar transistor (IGBT), power metal-oxide-semiconductor field-effect transistor and thyristor [1,2,3,4]
The on-state voltage of P-SB-SJBT is about 1% lower than conventional super junction IGBT
Summary
The power semiconductor is a switching device characterized by high voltage and high current. It is generally composed of a bipolar junction transistor (BJT), insulatedgate bipolar transistor (IGBT), power metal-oxide-semiconductor field-effect transistor (power MOSFET) and thyristor [1,2,3,4]. These devices are used in a wide range of fields including high-power three-phase motor control inverters as well as a boost converter of UPS and industrial equipment power supplies.
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