Abstract
AIN films were deposited as capping (deposited on top of) and reaction barrier layers (placed between the Si substrate and La 2 O 3 film) to improve the thermal stability of La 2 O 3 films. The film structures were investigated by high-resolution transmission electron microscopy and angle-resolved X-ray photoelectron spectroscopy. The AlN-capped La 2 O 3 film did not change its structure after thermal annealing, while that with the AlN barrier films showed a slight increase in the film thickness. The Al atoms diffuse onto the film surface during annealing in the La 2 O 3 /AlN/Si stack, which makes the bottom AlN barrier layer less effective than the capping layer.
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