Abstract
We report new results on a tunneling junction for tandem solar cells using a nano-structured amorphous silicon p+layer (na-Si p+) as the recombination layer inserted between the n layer and the p layer. Devices were characterized by their dark current-voltage behavior (I-V), activation energy (Ea) and quantum efficiency (QE). The result shows that the tunnel junction with a na-Si p+insertion layer has higher recombination rates with higher density of defect states of about 2.7×1019cm-3, lower resistance with activation energy of 22meV. The tunnel junction with a na-Si p+insertion layer could be easily integrated into the tandem solar cell deposition process.
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