Abstract
Improvement in the selectivity of semiconducting resistive-type NO2 sensors has been achieved by numerical compensation derived from the output of calorimetric hydrocarbon sensors. The electrical resistance of resistive-type sensors using thick-film SnO2 increases due to exposure to NO2, whereas its resistance is decreased by i-C4H10. Oxidizing gases such as O2 and NO2 which are electronegative are adsorbed on the surface of n-type semiconductors, whereas reducing gases such as hydrocarbons and carbon monoxide react with these adsorbed oxidizing gases, causing electrons to return to the semiconductor. Calorimetric sensors are based on the principle of catalytic combustion between reducing gases and atmospheric oxygen on the surface of gas-detecting materials, therefore they are sensitive to reducing gases such as hydrocarbons, but are insensitive to oxidizing gases. It was found that the resistance of NO2 sensors in the range from 0 to 100 ppm NO2 was unaffected by the co-existence of 0 to 300 ppm i-C4H10 using a semiconducting NO2 sensor, a calorimetric sensor and numerical compensation.
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