Abstract
The effect of La 2O 3 additive on a SnO 2-based varistor material sintered at 1350 °C for 80 min was investigated. It was found that La 2O 3 significantly decreases the grain size and improves the non-linear electrical properties of SnO 2-based varistors. The sample with 1.00 mol% La 2O 3 has the best non-linear electrical property and the highest non-linear coefficient ( α = 23.0) among all the samples. The reason that the grain size decreases with increasing La 2O 3 concentration is explained. The permittivity decrease with increasing La 2O 3 concentration is caused by the ratio of grain size to barrier width. A modified defect barrier model was introduced in which the negatively charged acceptors substituting for Sn ions should be located at the grain boundaries.
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