Improvement in the I–V characteristics of carbon nanotube network transistors using microwave treatment

Abstract

This work describes the effects of microwave irradiation on the transfer characteristics of single-walled carbon-nanotube network transistors. The microwave treatment dramatically increases the on-off ratio of the electrical currents by reducing the off-state current. Detailed analyses of Raman spectroscopy data, the thermal effect, and a direct image comparison suggest preferential removal of the metallic paths formed in the transistor channel. This treatment can be utilized as method to repair for electrically failed transistors even after completion of device fabrication.