Improvement in the current-gain of a 1.3-µm npn-AlGaInAs/InP transistor laser using a thin p-GaInAsP base layer

Abstract

With the aim of increasing the current gain of a 1.3-µm-wavelength npn-AlGaInAs/InP transistor laser, we realized devices with a thin base layer to suppress unnecessary recombination between electrons and holes in the base layer. Consequently, we obtained a current gain of 0.18 with a base-layer thickness of 50 nm, which was 9 times higher than that previously reported with a base-layer thickness of 100 nm.