Abstract
In this work, an analytical model for Ferroelectric-Insulator-Germanium Double Gate Field Effect Transistor (F-I-GeDGFET) has been proposed considering gate stack of ferroelectric layer and dielectric layer. Poisson’s equation has been coupled with Landau-Khalatnikov equations to develop the model and various device characteristics have been derived. To analyze the effectiveness of ferroelectric gate stack in improving the characteristics of F-I-GeDGFET, a comprehensive comparison has been carried out with conventional Germanium Double Gate Field Effect Transistor (GeDGFET) with gate stack thickness equivalent F-I-GeDGFET. It has been demonstrated that surface potential increases sharply due to the negative capacitance exhibited by ferroelectric layer leading to high gain values and enhanced mobile charge density implying improved switching characteristics and carrier transport efficiency in the Ge channel.
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