Abstract
The effects of silicon doping on the properties of Zn-O-N (ZnON) films and on the device characteristics of ZnON thin-film transistors (TFTs) were investigated by co-sputtering silicon and zinc targets. Silicon doping was effective at decreasing the carrier concentration in ZnON films; therefore, the conductivity of the films can be controlled by the addition of a small amount of silicon. Doped silicon atoms also form bonds with nitrogen atoms, which suppresses nitrogen desorption from the films. Furthermore, Si-doped ZnON-TFTs are demonstrated to exhibit less negative threshold voltages, smaller subthreshold swings, and better long-term stability than non-doped ZnON-TFTs.
Highlights
New channel materials with higher mobility are required in order to further increase the current drive capabilities of oxide Thin-film transistors (TFTs) for more demanding applications such as ultra-high definition (UHD) (8K×4K pixels) displays
It is reported that ZnON-TFTs exhibit a much higher field-effect mobility (>50 cm2/Vs)[12,13,14,15] than conventional oxide TFTs including amorphous In-Ga-Zn-O (a-IGZO)-TFTs
ZnON-TFTs have two major challenges that have prevented their use in practical applications despite their high mobility
Summary
The peak temperature became higher with increasing CSi for both peak groups, which indicates that silicon doping is effective at stabilizing the nitrogen atoms in the films.
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