Improvement in Structural, Dielectric, Ferroelectric and Mechanical Properties in Metal Ions Doped Glycine Phosphite Single Crystals

Abstract

The single crystals of metal ions (Zn2+, Mg2+ and Cd2+) doped Glycine Phosphite (GPI) were grown from aqueous solution by employing the solvent evaporation and slow cooling techniques. Incorporation of dopants with GPI was confirmed by X-ray fluorescence spectroscopic analysis. Single crystal X-ray diffraction analysis was carried out to determine the lattice parameters and to analyze the structural morphology of GPI with dopants. Ferroelectric transition temperature was identified by dielectric measurements for pure and doped GPI crystals. Transition temperature of doped crystal increases significantly. Piezoelectric charge coefficient d33 was measured for pure and doped GPI crystals. Hysteresis (P-E) loop was traced for pure and doped GPI crystals with different biasing field. Crystalline perfection of doped GPI crystals was determined by HRXRD analysis. Microhardness measurements were carried out for understanding the mechanical stability of the crystals, the mechanical parameters such as elastic stiffness constant ‘C11’, yield strength ‘σy’ were calculated from hardness value. Meyer's index number was in the range of 1.6 to 2 for all the crystals. This indicates that the grown crystals are relatively soft materials.