Abstract
Energy band alignment plays an important role in heterojunction thin-film solar cells. In this work, we report the application of ternary Cd xZn1- xS buffer layers in antimony selenide (Sb2Se3) thin-film solar cells. The results of our study revealed that the Cd/Zn element ratios not only affected the optical band gap of Cd xZn1- xS buffers but also modified the band alignment at the junction interface. A Sb2Se3 solar cell with an optimal conduction-band offset value (0.34 eV) exhibited an efficiency of 6.71%, which represents a relative 32.1% enhancement as compared to the reference CdS/Sb2Se3 solar cell. The results further indicated that a "spike"-like band structure suppressed the recombination rate at the interface and hence increased the device open-circuit voltage and fill factor. Electrochemical impedance spectroscopy analysis exhibited that the Cd xZn1- xS/Sb2Se3 solar cell had higher recombination resistance and longer carrier lifetime than the CdS/Sb2Se3 device.
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