Abstract
AbstractThe reliability of InP‐based high‐electron‐mobility transistors (HEMTs) which hold promise as ultrafast transistors for handling the expansion of the communication capacity was investigated, and was shown to be successfully improved by an InP‐based HEMT structure capable of suppressing impact ionization. The structures used are a lattice‐matched composite channel InGaAs/InAlGaAs structure and a double‐doped structure. In the composite channel structure, impact ionization is suppressed because electrons move from InGaAs to InAlGaAs under a high voltage. In the double‐doped structure, the electric field concentration is relaxed and impact ionization is suppressed because the built‐in electric field is small, and the electrons are widely distributed in the channel layer. The results of an aging test at a drain voltage of 2 V and an ambient temperature of 175°C confirmed an improved reliability in both structures. © 2007 Wiley Periodicals, Inc. Electron Comm Jpn Pt 2, 90(5): 33– 38, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/ecjb.20321
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