Abstract
Reliability characteristics (retention and endurance) of RRAM are critical for its practical realization and need to be improved. In this work, we confirmed the trade-off between retention and endurance by using various top electrode thickness conditions. To improve both retention and endurance characteristics, we proposed a new method by using high-pressure hydrogen annealing. Finally, we obtained both improved retention and endurance characteristics in HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">X</sub> based RRAM devices after high-pressure hydrogen annealing treatment.
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