Abstract
We have investigated the effect of a post-nitridation-annealing (PNA) temperature on bias-temperature-instabilities (BTI) reliability and device performance of gate stacks formed by atomic layer deposition technology using and precursors. The gate stacks were intended for use in conventional metal gate transistors with a high temperature thermal budget of . Ultrathin effective-oxide-thickness films of about could be achieved with HfSiON gate stacks by using a PNA treatment. Moreover, the positive-BTI lifetimes of the PNA samples were improved by about one order of the magnitude with respect to lifetimes of the PNA samples, ten year lifetimes being readily achieved with at .
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