Abstract
The performance of transparent organic light-emitting diodes (OLEDs) can be substantially improved by increasing the rf sputtering power in the deposition of an indium tin oxide cathode. This dependence of device performance on sputtering power is quite different from that reported for transparent OLEDs. The effect is attributed to sputtering induced substrate-heating resulting in chemical reactions at the Al–LiF–Alq3 interface and electron injection enhancement. By effectively dissipating the energy of sputtered particles, device damage can be taken away. The findings herein show that a transparent OLED having better electron injection properties than a conventional OLED can be fabricated.
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