Abstract
The desirable configuration of an amorphous WO3 (a-WO3) solid-state electrochromic device (ECD) was examined in order to improve the poor open-circuit memory and low current efficiency observed in an a-WO3/Cr2O3 ECD. It was found that a device with an SiO2 (or Nb2O5) layer introduced between the a-WO3 layer and the Cr2O3 layer exhibited long open-circuit memory and good current efficiency. The charge dissipation in the a-WO3/SiO2 (or Nb2O5)/Cr2O3 ECD was as low as that in an a-WO3/liquid electrolyte ECD. In addition, reactive evaporation of Cr2O3 in an atmosphere of H2O activated by thermal electrons was attempted in an effort to better the response speed of the device.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
