Abstract
The noise performance was improved by modifying the junction structure of GaAsSb-based backward diodes for millimeter and terahertz wave detection. A noise equivalent power (NEP) of 64 pW/Hz1/2 at 300 GHz was achieved with diodes that consisted of a p+-GaAsSb/n-InGaAs heterojunction. This value was much lower than 303 pW/Hz1/2 that was obtained from the previously reported diodes consisting of a p+-GaAsSb/i-InAlAs/n-InGaAs heterojunction. The improvement in the NEP resulted from a considerable reduction in the junction resistance (R j ) from 17.9 MΩ to 0.41 MΩ by removing the thin i-InAlAs barrier layer. The modified GaAsSb-based backward diodes are applicable for millimeter and terahertz receiver applications.
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