Improvement in Light-Output Power of InGaN∕GaN LED by Formation of Nanosize Cavities on p-GaN Surface

Abstract

To improve the extraction efficiency of InGaN/GaN multiple quantum well light-emitting diodes LEDs , nanosize cavities werefabricated on a top p-GaN surface by inductively coupled plasma etching utilizing self-assembled platinum clusters as an etchmask. The relative output power was increased up to 88% compared to that of the LED without nanosize cavities. This result couldbe attributed to an enhancement in the escape of light due to the angular randomization by the nanosize cavities and to the reducedcontact resistance due to the increased contact area between the transparent metal layers and the p-GaN.© 2005 The Electrochemical Society. DOI: 10.1149/1.2076987 All rights reserved.Manuscript submitted April 25, 2005; revised manuscript received July 19, 2005. Available electronically October 7, 2005.