Abstract
In this paper, a metal-ferroelectric-semiconductor (MFS) structure for non-volatile storage is fabricated with BaxSr1-xTiyMn1-yO3 (BSMT) as the ferroelectric layer. The ferroelectric thin film is deposited using the sol-gel spin coating process and annealed at 650 °C in nitrogen ambient. An evaluation of the performance of the fabricated structure is conducted by measuring its memory window, leakage current, polarization retention, and dielectric loss. The ferroelectric film showed observable changes in properties as the concentration of Sr and Mn was changed in (BaxSr1-xTiyMn1-yO3). In order to verify the composition and structure of the fabricated ferroelectric film, it was examined with SEM, XRD, AFM, and XPS. The Sr and the Mn doping concentration in BaTiO3 improve the dielectric constant value and also the dielectric loss. Sr and Mn concentrations are optimized in BaxSr1-xTiyMn1-yO3 for improved ferroelectric results, and their application to non-volatile memory is discussed.
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