Abstract
In this article, we have demonstrated a new AlGaN-based D-UV LED (Deep-Ultraviolet Light Emitting Diode) structure and investigated improved electrical output characteristics theoretically. In the new structure, we have used partially graded quantum barriers (PQBs) rather than stepped quantum barrier (SQBs) as setup in conventional LEDs. The simulation results confirm that the usage of PQBs in new D-UV LED structure notably enhances the internal quantum efficiency (IQE), light output power (LOP) or luminous power and enhances power spectral density in the D-UV region. The reason behind this improvement is higher potential barrier for carriers in the active region which helps in improving the carrier's confinement in the quantum wells and favors significant increment in radiative recombination. • Design of new heterostructure for AlGaN-based D-UV LED. • Usage of partially graded quantum barriers (PQBs). • Simulation using SRH (Shockley-Read-Hall) recombination and k. p model. • Significant improvement in efficiency and luminous power. • Significant improvement in spectral power density in D-UV region.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
