Improvement in dielectric, piezoelectric and ferroelectric properties of 0.64PMN–0.36PT ceramics by Sb modification

Abstract

Pure and Sb-doped 0.64PMN–0.36PT (PMN–PT) ceramics near MPB have been prepared using columbite precursor technique. The effects of Sb-doping on microstructure and electrical properties were studied systematically. Powder XRD and SEM exhibited the formation of pure perovskite phase with homogeneous microstructure. As compared to the pure PMN–PT ceramics, enhanced dielectric constant, and reduced transition temperature (Tm) and dielectric loss (tan δ) were observed for Sb-doped PMN–PT ceramics. Displacement–Voltage (D–V) butterfly hysteresis loops and quasi-static d33 meter revealed a higher value of piezoelectric charge coefficient (d33) for Sb-doped sample (644 pm/V and 551 pC/N) as compared to pure ceramic (435 pm/V and 410 pC/N). P–E hysteresis curves showed improved ferroelectric properties after Sb doping. A high value of pyroelectric coefficient (p ∼ −1170.4 µC m−2 °C−1) for Sb-doped PMN–PT ceramic was obtained. Sb-doped PMN–PT ceramic showed an excellent anti-fatigue nature over 107 switching cycles. Small leakage current was evident from J–E analysis for both the ceramics. Therefore, Sb-doped PMN–PT ceramic proved to be a better choice for applications in the electronic ceramic industries.