Improvement in carrier dynamics in InxGa1−xN/GaN multi-quantum well for solar cell applications

Abstract

In this work, we have studied and simulated nanostructures to improve the solar cell efficiency. The idea of this study is to insert multi-quantum wells in the structure of a solar cell (MQWSC). The electric field, recombination, and the photogeneration rates of charge carriers in QWSC influence the collection and carrier extraction efficiency. In this work, the behavior of these magnitudes and the main characteristics as current density–voltage J–V and external quantum efficiency of In0.35Ga0.65N/GaN MQWSC are studied. Our results have shown that the insertion of five MQW layers within the intrinsic region of p-GaN/i-InGaN/n-GaN heterojunction solar cell can increase both short-circuit current and the conversion efficiency from 0.89 to 2.12 mA/cm2 and 0.78 to 1.25%, respectively; additionally, with the same number of embedded MQWs, the absorption range edge of the heterojunction solar cell extends from 430 to 500 nm.