Abstract
Improved versions of a Y-domain memory element are presented. These improvements include element shape, detector configuration, element material composition, and element-substrate interface considerations. It is shown that the element can be optimized for use in a solid-state random-access memory. Using a shortened element with 60 degrees head and tail angles and an offset detector produces an output signal which approaches the ideal case. >
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
