Abstract
A series of erbium- and indium-doped 0.965K0.40Na0.58Li0.02Nb0.96Sb0.04O3–0.035Bi0.5K0.5ZrO3:0.25%Er/xIn lead-free piezoelectric ceramics with upconversion photoluminescence (UCPL) properties were prepared by the conventional solid state reaction. A systematical investigation into the effects of In3+ doping on the structural, dielectric, ferroelectric, piezoelectric, and UCPL properties of the ceramics was carried out. The distribution of Er3+-sites could be modified by In3+ doping according to the analysis of UV–Vis-NIR absorption cross-section, resulting in improved piezoelectric and photoluminescence properties of the ceramics. The optimized comprehensive properties are performed by the x = 0.25% samples of which the piezoelectric coefficient d33 ~ 257 pC/N, Curie temperature TC ~ 273 °C, remanent polarization Pr ~ 12.5 µC/cm2, dielectric constant er ~ 1551, and d33 ~ 257 pC/N which is the supreme piezoelectric coefficient achieved in KNN-based UCPL ceramics as of now. The results demonstrate that erbium and indium co-doped KNN-based ceramics may have potential applications in electro-optical devices.
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