Abstract
Ga doped ZnO(GaZnO) nanostructures for the improved ultrafast nonlinear optical properties by selective electron beam irradiation were studied. The crystalline size of the films shows a decrement due to lattice mismatch effects arised owing to EBI induced stress. The occurrence of the E2H mode in Raman spectra indicates the quality of the grown nanostructures. Gaussian deconvolution fitting on photoluminescence spectra reveals defect related emission originated from intrinsic defects. The core level spectra of O1s from XPS analysis has shown a substantial changes upon EBI in which peak related to oxygen vacancy defect got suppressed The third harmonic generation studies in both femtosecond and nanosecond regime shows substantial enhancement in the signal intensity which outcomes the effect of EBI treatment
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
