Abstract
We report on an improvement of optoelectrical properties of poly(methoxy-ethylexyloxy-phenylenevinilene) (MEH-PPV) polymer by incorporation of boron doped freestanding silicon nanocrystals (Si-ncs). The photoluminescence (PL) behavior of blended Si-ncs could be assigned to quantum confinement of excitons in nanocrystallites with the energy band gap around ∼2.2eV. Low temperature PL at low excitation intensities reveals the presence of boron in Si-ncs. The photoconductivity measurements showed that the light absorption in the Si-nc/MEH-PPV films lead to a charge separation. The presence of the Si-ncs in the film increases the carrier transport, avoids oxygen diffusion, and significantly improves the photostability of the composite.
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