Abstract
Nitrogen is incorporated into thin HfO2 films by pulsed laser deposition using in situ ionized nitrogen. The improved thermal stability and interfacial microstructure are further confirmed by high-resolution transmission electron microscopy. The composition of the thin film is investigated by x-ray photoelectron spectroscopy and electron energy-loss spectroscopy. Electrical studies show a property permittivity of 27.7 and low leakage current density were achieved by incorporation of a small amount (about 1 at. %) of nitrogen. The dominant conduction mechanisms of the Pt/HfO2/p-Si structure are trap-assisted tunneling and Schottky emission at low electric field for the gate and substrate injection, respectively.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
