Abstract
A multiquantum barrier and graded-index separate confinement heterostructure are employed in a 1.55 µm InAlGaAs multiquantum well laser to reduce the threshold current and temperature sensitivity. A characteristic temperature as high as 77 K is measured between 25 and 75°C for as-cleaved 1000 µm-long uncoated devices. The degradation of slope efficiency in the same temperature range is less than 30%.
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