Abstract
ABSTRACTVO2films were deposited on sapphire, ITO glass and 200 nm thick silicon nitride membranes by Pulsed Laser Deposition (PLD). The electrical and optical properties have been investigated. Joule heating devices fabricated on silicon nitride membranes switches from semiconductor phase to metal phase by applying a constant voltage across two metal contacts. Compared to the devices fabricated on the normal substrates, such as sapphire, silicon or glasses, the switching speed of the devices on membrane is an order of magnitude faster. Decreasing the area and thickness of VO2 on top of thinner membranes allows kHz bandwidth to be achieved.
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