Abstract
Chemical treatment is a very effective method for passivation of semiconductor surfaces. HF and sulfide (Na2S⋅9H2O) pretreatments of InP have been shown to improve the properties of BaF2/InP interface significantly. The interface state density as obtained from C–V (1 MHz) measurements of metal-insulator–semiconductor structures was found to be reduced from 5.8×1010 cm−2 eV−1 to 2.1×1010 cm−2 eV−1 after HF treatment. The reduced interface state density resulted in increased photoluminescence intensity. X-ray photoelectron spectroscopy studies revealed that the formation of InF3 and P2S3 after HF and sulfide treatments, respectively, are responsible for better interfacial behavior.
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