Abstract
The comparative study of epitaxial 380-nm-thickp-Al0.091Ga0.909 N materials without and withspecial surface chemical treatment is systematically carried out. Afterthe treatment process, the deep level luminous peak in the 10 Kphotoluminescence spectrum is eliminated due to the decrease of surfacenitrogen vacancy VN related defective sites, while thesurface root-mean-square roughness in atomic force microscopymeasurement is decreased from 0.395 nm to 0.229 nm by such a surfacepreparation method. Furthermore, the performance of surface contactwith Ni/Au bilayer metal films is obviously improved with the reductionof the Schottky barrier height of 55 meV. The x-ray photoelectronspectroscopy (XPS) results show a notable surface element contentchange after the treatment which is considered to be the cause of theabove-mentioned surface characteristics improvement.
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