Improved Subthreshold Swing and Short Channel Effect in FDSOI n-Channel Negative Capacitance Field Effect Transistors

Daewoong Kwon,Ava J Tan,Korok Chatterjee,Angada B Sachid,Chenming Hu,Ajay K Yadav,Roberto Dos Reis,Sayeef Salahuddin,Hong Zhou

doi:10.1109/led.2017.2787063

Improved Subthreshold Swing and Short Channel Effect in FDSOI n-Channel Negative Capacitance Field Effect Transistors

Daewoong Kwon, Ava J Tan + Show 7 more

https://doi.org/10.1109/led.2017.2787063

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Journal: IEEE Electron Device Letters	Publication Date: Feb 1, 2018
Citations: 146

Affiliation: University of California, Berkeley, Lawrence Berkeley National Laboratory

#Negative Capacitance Field Effect Transistors #Drain Induced Barrier Lowering Characteristics + Show 8 more

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Abstract

Negative capacitance (NC) FETs with channel lengths from 30 nm to $50~\mu \text{m}$ , gated with ferroelectric hafnium zirconium oxide are fabricated on fully depleted silicon-on-insulator (FDSOI) substrates. Enhanced capacitance due to NC, hysteresis-free operation, and improved subthreshold slope are observed. The NC effect leads to enhancement of drain current for small voltage operation. In addition, improved short channel performance is demonstrated owing to the reverse drain induced barrier lowering characteristics of the NC operation.

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