Abstract
Marked improvement was observed in a-Si:H prepared from SiH 2Cl 2 at the high growth rate of 15 Å/s by ECR-hydrogen plasma. The defect densities in the annealed state and the saturated state after light soaking are maintained at low levels, (1–5) × 10 15 cm −3 and (2–5) × 10 16 cm −3, for the films with a wide range of the structural parameters such as the optical gap (1.75–1.95 eV), hydrogen content (5–20 at.%), and content of SiH 2 bonds (2–10 at.%). In addition, no marked changes were observed in the behavior of light induced degradation as the Fermi level position of the films was varied in a range of 0.6 eV. This leads us to conclude that the defect precursors are efficiently eliminated from the Si-network during the film growth.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
